^??y ^s.mi-conducto'i lpr , ijt 12(2. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf linear power transistor BLW34 description n-p-n silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. the excellent d.c. dissipation properties for class-a operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. the combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. the transistor has a 1/4" capstan envelope with ceramic cap. quick reference data r.f. performance mode of operation class-a; linear amplifier ^vision mhz 860 860 vce v 25 25 ic ma 600 600 th c 70 25 dim<1> db -60 -60 p (1) ro sync w > 1,8 typ 2,15 gp db > 9 typ 10,2 note 1. three-tone test method (vision carrier-8 db, sound carrier-7 db, sideband signal -16 db), zero db corresponds to peak sync level. pin configuration pinning-sot122a. top view fig.1 simplified outline. sot122a. pin 1 2 3 4 description collector emitter base emitter nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
uhf linear power transistor BLW34 ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (peak value); vbe = 0 open base emitter-base voltage (open collector) collector current d.c. or average (peak value); f> 1 mhz total power dissipation at tmt, = 25 c storage temperature operating junction temperature 10 ig (a) 1 10-1 1 (1) secc "t t 1 j j ?' ? r~ _!_ -ft i ?6 k ?nb- k \\ i -1- 25 c 1)_j -- 10 vce(v) 102 nd breakdown limit ( independent of temperature). fig. 2 d.c. soar. vcesm vceo plot tstg tj max. 50 v max. 30 v max. 4 v max. 2,25 a max. 3,5 a max. 31 w -65 to+150 c max. 200 "c fig.3 power derating curve vs. temperature. thermal resistance (see fig.4) from junction to mounting base (dissipation = 15 w; tmb = 79 "c; i.e. th = 70 c) from mounting base to heatsink rth j-mb rth mb-h 6,2 km/ 0,6 k/w
uhf linear power transistor BLW34 fig.4 maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (rthmb-h = 0,6 k/w.) example nominal class-a operation: vce = 25 v; ic = 600 ma; th = 70 c. fig.4 shows: rthj-h max. 6,75 k/w t, max. 170 c typical device: rthj-h typ. 5,45 k/w tj typ. 152 ac
uhf linear power transistor BLW34 package outline studded ceramic package; 4 leads sot122a - ---- d \ t ni t - 4 x t / . , ,,3 , v j\i -d2 a -^- \ metal t c h?|w1(m>|a| 10 mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) / w j i unit mm a 597 4,74 b 585 5.58 c 018 0.14 d 750 7.23 d1 6,48 6.22 d2 7,24 6.93 h 27,56 25.78 l 9.91 9.14 m1 3.18 2.66 m 1,66 1.39 n 11,82 11.04 nl max. 1.02 ns 3.86 2.92 q 3,38 2.74 w 8-32 unc w1 0,381 a 90 outline version sot122a |6c references jedec i eiaj projection 97-04-18
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